TP0610T
Features
- - High input impedance and high gain
- - Low power drive requirement
- - Ease of paralleling
- - Low CISS and fast switching speeds
- - Excellent thermal stability
- - Integral source-drain diode
- - Free from secondary breakdown
Applications
- - Logic level interfaces
- ideal for TTL and CMOS
- - Solid state relays
- - Battery operated systems
- - Photo voltaic systems
- - Analog switches
- - Power management
- - Tele switches
General Description
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching...
