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S29C51001T - 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY

This page provides the datasheet information for the S29C51001T, a member of the S29C51001 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY family.

Datasheet Summary

Description

The S29C51001T/S29C51001B is a high speed 131,072 x 8 bit CMOS flash memory.

Features

  • s 128Kx8-bit Organization s Address Access Time: 70, 90, 120 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100µA (Max) s Hardware Data Protection s Lo.

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Datasheet preview – S29C51001T

Datasheet Details

Part number S29C51001T
Manufacturer SyncMOS
File Size 7.54 MB
Description 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
Datasheet download datasheet S29C51001T Datasheet
Additional preview pages of the S29C51001T datasheet.

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Full PDF Text Transcription

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SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 128Kx8-bit Organization s Address Access Time: 70, 90, 120 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.
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