small signal low noise transistors.
* NPN silicon epitaxial transistor for switching and amplifier applications
* This device is designed for low noise, high gain, general purpose applications at co.
* This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 5.
2N5088
2N5089
Unit
VCEO VCBO VEBO
IC TJ ,TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous Operation and Storage Junction Temperature Range
30 25 35 30
4.5 100 -55 to +150
V V V mA °C
* Th.
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