MJD3055
Marking Code
MJD3055
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
70
VEBO
Emitter-Base Voltage
5
IC Collector Current Continuous
10
IB Base Current
6
Power Dissipation at TC=25°C
PD
Derate above 25°C
20 0.16
PD TJ, TSTG
Power Dissipation at TA=25°C
D
Key Features
Designed for general purpose amplifier and low speed switching.
Full PDF Text Transcription for MJD3055 (Reference)
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MJD3055. For precise diagrams, and layout, please refer to the original PDF.
SMD Power Transistor (NPN) MJD3055 SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mec...
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e amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD3055 Marking Code MJD3055 VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 70 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 10 IB Base Current 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.75 0.
MJD3055 Datasheet
