* Benefits D Low OnĆResistance: 6 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability D Low Offset Voltage D FullĆVoltage Operation D Easily Driven Without Buffer D Low Error Voltage D No HighĆTemperature RunĆAway" Applicatio
BS107
TEMIC
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N-channel enhancement-mode mos transistors.
Siliconix VN2010L/BS107 NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W.
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