The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TEMIC
Siliconix
N-Channel Enhancement-Mode 1ransistor
175°C Maximum Junction Temperature
SUB60N06-08
Product Summary
V(BR)nSS (V) 60
rnS(on) (0) 0.008
In (A) 60a
D
TO-263
G DS ThpView
DRAIN connected to TAB
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 175°C)
Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb
Power Dissipation
Operating Junction and Storage Temperature Range
Tc = 25°C Tc = 125°C
L= 0.1 mR TC = 25°C TA = 25°C"
Symbol VGS ID IDM IAR EAR
PD TJ, Tstg
Limit
±20 60' 55 240 60 180 150 3.7 -55 to 175
Unit
V
A
mJ W °C
Thermal Resistance Ratings
Parameter
Symbol
Junction-ta-Ambient, PCB Mounte lunction-to-Case
RthJA RthJC
Notes
a. Package limited.
SUB60N06-08 Datasheet
