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TEMIC
Siliconix
SUP/SUB60P06-20
P-Channel Enhancement-Mode Thansistor
175°C Maximum Junction Temperature
Product Summary
V(BR)DSS (V)
rDS(on) (Q)
ID (A)
-60
0.020
-60a
TO-220AB
S
o TO-263
DRAIN connected to TAB
GDS ThpView SUP60P06-20
GDS ThpView
SUB60P06-20
D P-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (TJ = 17S'C)
Tc=2S'C Tc= 12S'C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
L-0.1mH
Power Dissipation
Tc = ZS'C (TO-ZZOAB and TO-Z63) TA = 1ZS'C (TO-263)C
Operating Junction and Storage Thmperature Range
Symbol
VGS JD JDM JAR EAR PD TJ. T,tg
Limit
±20 -60' -55 -240 -60 180 150 3.