SUB60N06-08 - N-Channel MOSFET

TEMIC

Datasheet Details

Part number	SUB60N06-08
Manufacturer	TEMIC
File Size	97.34 KB
Description	N-Channel MOSFET
Datasheet	SUB60N06-08 Datasheet
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TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUB60N06-08 Product Summary V(BR)nSS (V) 60 rnS(on) (0) 0.008 In (A) 60a D TO-263 G DS ThpView DRAIN connected to TAB S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Gate-Source Voltage Parameter Continuous Drain Current (TJ = 175°C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range Tc = 25°C Tc = 125°C L= 0.1 mR TC = 25°C TA = 25°C" Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit ±20 60' 55 240 60 180 150 3.7 -55 to 175 Unit V A mJ W °C Thermal Resistance Ratings Parameter Symbol Junction-ta-Ambient, PCB Mounte lunction-to-Case RthJA RthJC Notes a. Package limited.

Published: Nov 21, 2018 |