SUB60N06-14 - N-Channel Transistor

TEMIC

Datasheet Details

Part number	SUB60N06-14
Manufacturer	TEMIC
File Size	96.55 KB
Description	N-Channel Transistor
Datasheet	SUB60N06-14 Datasheet
Additional preview pages of the SUB60N06-14 datasheet.

📁 Similar Datasheet

SUB60N06-18 - N-Channel MOSFET (Vishay Siliconix)
SUB610 - Schottky Barrier Diode (AUK)
SUB65P04-15 - P-Channel MOSFET (Vishay Siliconix)
SUB65P06-20 - P-Channel MOSFET (Vishay Siliconix)
SUB65P06-20 - P-Channel Enhancement-Mode Transistors (TEMIC Semiconductors)
SUB15P01-52 - P-Channel MOSFET (Vishay Siliconix)
SUB15P01-52 - P-Channel MOSFET (VBsemi)
SUB40N06-25L - N-Channel MOSFET (Vishay Siliconix)
SUB45N03-13L - N-Channel MOSFET (Vishay Siliconix)
SUB70N03-09BP - N-Channel MOSFET PWM Optimized (Vishay)

Other Datasheets by TEMIC

SUB60N06-08 - N-Channel MOSFET
SUB60P06-20 - P-Channel Transistor
SUB50N06-18 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

TEMIC Siliconix SUP/SUB60N06-14 N-Channel Enhancement-Mode 'fransistor 175°C Maximum Junction Temperature Product Summary V(BR)OSS (V) 60 rOS(on) (Q) 0.014 TO-220AB o 10 (A) 60a TO-263 DRAIN connected to TAB GDS ThpView SUP60N06-14 G0 S ThpView SUB60N06-14 o Go-l S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter Gate-Source Voltage Continuous Drain Current (T] = 17S'C) Tc=2S'C Tc = l00'C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L=O.lmH Power Dissipation Tc = 2S'C (TO·220AB and m-263) TA = 2S'C (TO-263)C Operating Junction and Storage Thmperature Range Symbol VGS 10 10M lAR EAR Po Tj,Ts'g Limit ±20 60' 42 240 60 180 100 3.

Published: Nov 21, 2018 |