SUB50N06-18 - N-Channel MOSFET

TEMIC

Datasheet Details

Part number	SUB50N06-18
Manufacturer	TEMIC
File Size	90.46 KB
Description	N-Channel MOSFET
Datasheet	SUB50N06-18 Datasheet
Additional preview pages of the SUB50N06-18 datasheet.

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Full PDF Text Transcription

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TEMIC Siliconix SUP/SUB50N06-18 N-Channel Enhancement-Mode lransistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 rDS(on) (Q) 0.018 ID (A) 48 TO-220AB D o TO-263 DRAIN connected to TAB GDS ThpView SUP50N06·18 G DS ThpView SUB50N06-18 S N·Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain·Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175'C) Tc=25'C Tc = 100'C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy" L=O.lmH Power Dissipation TC = 25'C (TO-220AB and TO·263) TA = 25'C (TO.263)b Operating Junction and Storage Thmperature Range VDS VGS ID IDM IAR EAR Po TJ, Tstg 60 V ±20 48 34 A 240 60 90 mJ 83 W 3.

Published: Nov 21, 2018 |