* VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

TGD30H10K General Features
* VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
* High density cell desig.

The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features
* VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)

30H10I

30H150

30H80

30H80A

30H80G

30HC

30HCA

30HCB

30HCC

30HCD

30HS

30HSA

30HSB