2N3055HV - NPN POWER TRANSISTOR

Description

Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Ts

TRANSYS Electronics Limited

📥 Download Datasheet

Datasheet Details

Part number	2N3055HV
Manufacturer	TRANSYS Electronics Limited
File Size	205.06 KB
Description	NPN POWER TRANSISTOR
Datasheet	2N3055HV Datasheet
Additional preview pages of the 2N3055HV datasheet.

📁 Similar Datasheet

2N3055HV - NPN Power Transistor (CDIL)
2N3055H - 15A Power Transistors (Multicomp)
2N3055H - Silicon Power Transistor (USHA)
2N3055H - Silicon NPN Power Transistor (Inchange Semiconductor)
2N3055H - Power Transistor (Seme LAB)
2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (STMicroelectronics)
2N3055 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (CENTRAL SEMICONDUCTOR)
2N3055 - NPN Power Silicon Transistor (VPT)
2N3055 - Silicon NPN Power Transistors (SavantIC)

Other Datasheets by TRANSYS Electronics Limited

2N3772 - NPN SILICON PLANAR POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text

Transys Electronics L I M I T E D www.DataSheet4U.com NPN POWER TRANSISTOR 2N3055HV TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg VALUE 100 100 7.0 15 7.

Published: Jul 24, 2010 |