SB073P200-W-AG - Schottky Barrier Diode Wafer

TRANSYS Electronics Limited

Datasheet Details

Part number	SB073P200-W-AG
Manufacturer	TRANSYS Electronics Limited
File Size	184.23 KB
Description	Schottky Barrier Diode Wafer
Datasheet	SB073P200-W-AG_TRANSYSElectronicsLimited.pdf

Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www. DataSheet4U. com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Curr.

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Published: Nov 7, 2008 |