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SB073P200-W-AG - Schottky Barrier Diode Wafer

Features

  • Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www. DataSheet4U. com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Curr.

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Datasheet Details

Part number SB073P200-W-AG
Manufacturer TRANSYS Electronics Limited
File Size 184.23 KB
Description Schottky Barrier Diode Wafer
Datasheet download datasheet SB073P200-W-AG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www.DataSheet4U.com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2) Symbol Unit VRRM VF IF(AV) IR IR TJ TSG Volt Volt Amp SB073P200-W-Ag/Al (See ordering code below) 200 0.
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