Datasheet Summary
SB073P200-W-Ag/Al
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
Data Sheet
Features
Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier
1. Solderable Surface Ti/Ni/Ag
- Suffix "Ag" 2. Wire Bond Surface Aluminium
- Suffix "Al"
Anode
..
Solderable Surface Ti/Ni/Ag Cathode
Cathode
Symbol
Electrical Characteristics @ 25 C
Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2)
Symbol Unit
VRRM...