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2N3700 Datasheet Preview

2N3700 Datasheet

SILICON NPN TRANSISTOR

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SILICON NPN TRANSISTOR
2N3700
High Voltage, Medium Power Silicon Planar NPN Transistor
Hermetic TO18 Metal Package
High Reliability Screening Options Available
CECC and Space Quality Level Options
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
140V
VCEO Collector – Emitter Voltage
80V
VEBO Emitter – Base Voltage
7.0V
IC Continuous Collector Current
1.0A
PD Total Power Dissipation at TA = 25°C
0.5W
Derate Above TA = 25°C
2.9mW/°C
TC = 25°C
1.0W
Derate Above TC = 25°C
5.7mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
350
175
Unit
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 5266
Issue 2
Page 1 of 3




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2N3700 Datasheet Preview

2N3700 Datasheet

SILICON NPN TRANSISTOR

No Preview Available !

SILICON NPN TRANSISTOR
2N3700
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IEBO
Emitter-Base Cut-Off Current
ICES
Collector-Emitter Cut-Off
Current
IC = 30mA
VEB = 7.0V
VEB = 5.0V
VCE = 90V
IB = 0
IC = 0
IC = 0
TA = 150°C
ICBO
Collector-Base Cut-Off Current VCB = 140V
IE = 0
IC = 0.10mA
VCE = 10V
IC = 10mA
VCE = 10V
hFE(1)
DC Current Gain
IC = 150mA
VCE = 10V
TA = -55°C
IC = 500mA
VCE = 10V
IC = 1.0A
VCE = 10V
VCE(sat)(1)
VBE(sat)(1)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IC = 150mA
IC = 500mA
IC = 150mA
IB = 15mA
IB = 50mA
IB = 15mA
DYNAMIC CHARACTERISTICS
|hfe|
Magnitude of Small-Signal
Short-Circuit Current Gain
hfe
Small-Signal Short-Circuit
Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 50mA
f = 20MHz
IC = 1.0mA
f = 1.0KHz
VCB = 10V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
VCE = 10V
VCE = 5.0V
IE = 0
IC = 0
Notes
(1) Pulse Width 300us, δ ≤ 2%
Min. Typ. Max. Unit
80 V
10 µA
10
nA
10
5
µA
10
50
90
100 300
40
50
15
0.2
0.5 V
1.1
4 5 20
80 400
12 pF
60 pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 5266
Issue 2
Page 2 of 3


Part Number 2N3700
Description SILICON NPN TRANSISTOR
Maker TT
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