• Part: TSCDH30065G1
  • Description: 650V SiC Merged PIN Schottky Diode
  • Category: Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 387.95 KB
Download TSCDH30065G1 Datasheet PDF
Taiwan Semiconductor
TSCDH30065G1
TSCDH30065G1 is 650V SiC Merged PIN Schottky Diode manufactured by Taiwan Semiconductor.
Taiwan Semiconductor 30A, 650V SiC Merged PIN Schottky Diode Features - Max junction temperature 175°C - MPS structure for high ruggedness to forward current surge events - High-speed switching possible - High forward surge capability - High-frequency operation - Positive temperature coefficient on VF - RoHS pliant - Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT VRRM IFSM TJ MAX °C Package TO-247-3L Configuration mon cathode APPLICATIONS - General purpose - Switch mode power supplies - Power factor correction MECHANICAL DATA - Case: TO-247-3L - Molding pound meets UL 94V-0 flammability rating - Terminal: Matte tin plated...