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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSF20H100C Datasheet

(TSF20H100C - TSF20H150C) Trench MOS Barrier Schottky Rectifier

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TSF20H100C thru TSF20H150C
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
MECHANICAL DATA
Case : ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
TerminalMatte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity : As marked
Mounting torque : 5 in-lbs. max.
Weight1.7 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated VR)
SYMBOL TSF20H100C TSF20H120C TSF20H150C UNIT
VRRM
100
120
150 V
IF(AV)
20
10 A
IFSM 110 A
dV/dt
10000
V/μs
Isolation voltage from terminal to heatsink t = 1 min
VAC
1500
V
Breakdown voltage ( IR =1.0mA, Ta =25°C )
Instantaneous forward voltage per diode
( Note1 )
IF = 5A
IF = 10A
IF = 5A
IF = 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle
VBR
VF
VF
IR
RθjC
TJ
TSTG
100
Typ. Max.
0.64 -
0.74 0.81
0.55 -
0.63 0.70
- 200
1.5 10
2.5
120
Typ. Max
0.68 -
0.78 0.87
0.56 -
0.63 0.69
- 250
5 15
4.9
- 55 to + 150
- 55 to + 150
150
Typ. Max.
0.73 -
0.81 1.10
0.59 -
0.67 0.73
- 150
3 10
3.8
V
V
μA
mA
OC/W
OC
OC
Document NumberDS_DS_D1401006
Version:D14
Free Datasheet http://www.datasheet4u.com/


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSF20H100C Datasheet

(TSF20H100C - TSF20H150C) Trench MOS Barrier Schottky Rectifier

No Preview Available !

TSF20H100C thru TSF20H150C
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKAGE
TSF20HXXXC
C0
ITO-220AB
Note 1: "xxx" defines voltage from 100V (TSF20H100C) to 150V (TSF20H150C)
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
TSF20H120C C0
TSF20H120C C0G
PART NO.
TSF20H120C
TSF20H120C
PACKING CODE
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25oC unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
30
25
TSF20H100C
20
15
10
TSF20H120C
5
WITH HEATSINK
4in x 6in x 0.25in
Al-Plate
TSF20H150C
0
0 25 50 75 100 125
CASE TEMPERATURE (oC)
150
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TSF20H100C
10
Tj=150oC
1
Tj=125oC
0.1
Tj=100oC
Tj=25oC
0.01
0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TSF20H120C
10 Tj=150oC
1 Tj=125oC
0.1
0.01
0
Tj=100oC
Tj=25oC
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TSF20H150C
10 Tj=150oC
1
Tj=125oC
0.1
Tj=100oC
0.01
0
Tj=25oC
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1
Document NumberDS_DS_D1401006
Version:D14
Free Datasheet http://www.datasheet4u.com/


Part Number TSF20H100C
Description (TSF20H100C - TSF20H150C) Trench MOS Barrier Schottky Rectifier
Maker Taiwan Semiconductor
Total Page 3 Pages
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