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TSF20H100C - Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the TSF20H100C, a member of the TSF20H150C Trench MOS Barrier Schottky Rectifier family.

Description

FIG.

FIG.

Features

  • - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB.

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Datasheet preview – TSF20H100C

Datasheet Details

Part number TSF20H100C
Manufacturer Taiwan Semiconductor
File Size 225.29 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet TSF20H100C Datasheet
Additional preview pages of the TSF20H100C datasheet.

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Full PDF Text Transcription

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TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity : As marked Mounting torque : 5 in-lbs. max. Weight：1.
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