• Part: TSF20H100C
  • Description: Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Taiwan Semiconductor
  • Size: 225.29 KB
Download TSF20H100C Datasheet PDF
TSF20H100C page 2
Page 2
TSF20H100C page 3
Page 3

TSF20H100C Key Features

  • Patented Trench MOS Barrier Schottky technology
  • Excellent high temperature stability
  • Low forward voltage
  • Lower power loss/ High efficiency
  • High forward surge capability
  • pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • halogen-free, RoHS pliant Terminal:Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker tes
  • 55 to + 150