TSF20H120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

TSF20H120C Datasheet Preview — Preview of TSF20H120C PDF

Datasheet Details

Part number	TSF20H120C
Manufacturer	Taiwan Semiconductor ↗
File Size	202.14 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	TSF20H120C_TaiwanSemiconductor.pdf

TSF20H120C Product details

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 TA=150oC AVERAGE FORWARD CURRENT (A) 10 TA=125oC 1 TA=100oC 0.1 TA=25oC WITH HEATSINK 4in x 6in x 0.25in Al-Plate 0.01 0 0.2 0.4 0.6 0.8 1 1.2 CASE TEMPERATURE (oC) FORWARD VOLTAGE (V) FIG.3 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (mA) FIG.

Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

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Published: Jan 22, 2014 |