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TSM100N06 Datasheet - Taiwan Semiconductor

60V N-Channel Power MOSFET

TSM100N06 Features

* Advanced Trench Technology

* Low RDS(ON) 6.7mΩ (Max.)

* Low gate charge typical @ 81nC (Typ.)

* Low Crss typical @ 339pF (Typ.) Ordering Information Part No. TSM100N06CZ C0G Package TO-220 Packing 50pcs / Tube Note: “G” denote for Halogen Free Product Block Diagram N-Channe

TSM100N06 Datasheet (608.48 KB)

Preview of TSM100N06 PDF

Datasheet Details

Part number:

TSM100N06

Manufacturer:

Taiwan Semiconductor

File Size:

608.48 KB

Description:

60v n-channel power mosfet.
TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM100N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 6.7 @ VGS =10V ID.

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TSM100N06 60V N-Channel Power MOSFET Taiwan Semiconductor

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