TSM190N08 Key Features
- Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ
| Part Number | Description |
|---|---|
| TSM19N20 | 200V N-Channel Power MOSFET |
| TSM19N20CP | 200V N-Channel Power MOSFET |
| TSM100N06 | 60V N-Channel Power MOSFET |
| TSM10N80 | 800V N-Channel Power MOSFET |
| TSM10N80CI | 800V N-Channel Power MOSFET |