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TSM19N20 Datasheet 200v N-channel Power MOSFET

Manufacturer: Taiwan Semiconductor

Overview: TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3.

Key Features

  • Advanced Trench Technology Low RDS(ON) 92mΩ (Max. ) Low gate charge typical @ 55nC (Typ. ) Low Crss typical @ 73pF (Typ. ) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Drain Current Pulsed (Note 1) Avalanche Curre.

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