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TSM190N08 - 75V N-Channel Power MOSFET

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Features

  • Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max. ) Low gate charge typical @ 160nC (Typ. ) Low Crss typical @ 300pF (Typ. ) Block Diagram Ordering Information Part No. TSM190N08CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH TC=25° C.

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Datasheet Details

Part number TSM190N08
Manufacturer Taiwan Semiconductor
File Size 68.40 KB
Description 75V N-Channel Power MOSFET
Datasheet download datasheet TSM190N08 Datasheet
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TSM190N08 75V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 75 RDS(on)(mΩ) 4.2 @ VGS =10V ID (A) 190 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Block Diagram Ordering Information Part No. TSM190N08CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH TC=25° C TC=70° C TA=25° C TA=70° C IDM IAS, IAR EAS, EAR Symbol VDS VGS Limit 75 ±20 190 150 17 14 600 113 1900 250 160 2 1.
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