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TSM2314 - 20V N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Full PDF Text Transcription for TSM2314 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM2314. For precise diagrams, and layout, please refer to the original PDF.

TSM2314 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V Fea...

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V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switch ● PA Switch Ordering Information ID (A) 4.9 4.4 2.9 Part No. Package Packing TSM2314CX RF SOT-23 3Kpcs / 7” Reel TSM2314CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.

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