TSM60N06 Description
TO-252 (DPAK) Pin Definition: Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =10V ID (A).
TSM60N06 Key Features
- Advanced Trench Technology
- Low RDS(ON) 7.3mΩ (Max.)
- Low gate charge typical @ 81nC (Typ.)
- Low Crss typical @ 339pF (Typ.)