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TSM60N1R4 Datasheet N-Channel Power MOSFET

Manufacturer: Taiwan Semiconductor

Overview: TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 600 1.4 7.

Key Features

  • Super-Junction technology.
  • High performance due to small figure-of-merit.
  • High ruggedness performance.
  • High commutation performance.