Datasheet4U Logo Datasheet4U.com

TSM2831 Datasheet 20v P-channel Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ ..

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2831CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature O.

More Datasheets from Taiwan Semiconductor Company

Part Number Description
TSM2832 20V N-Channel Enhancement Mode MOSFET
TSM2301 20V P-Channel Enhancement Mode MOSFET
TSM2301B 20V P-Channel MOSFET
TSM2302 20V N-Channel Enhancement Mode MOSFET
TSM2306 30V N-Channel MOSFET
TSM2307 30V P-Channel MOSFET
TSM2310 20V N-Channel MOSFET
TSM2311 20V P-Channel Enhancement Mode MOSFET
TSM2312 20V N-Channel Enhancement Mode MOSFET
TSM2313 20V P-Channel MOSFET

TSM2831 Distributor