The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TSM2832
20V N-Channel Enhancement Mode MOSFET
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ
Pin assignment: 1. Gate 2. Drain 3. Source
www.DataSheet4U.com
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage
Block Diagram
Ordering Information
Part No. TSM2832CY Packing Tape & Reel 1kpcs per reel Package SOT-89
Absolute Maximum Rating (Ta = 25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation
unless otherwise noted)
Symbol
VDS VGS ID IDM Ta = 25 C Ta = 75 oC
o
Limit
20V ±8 3.6 10 1.5 1.
TSM2832 Datasheet
