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TSM2831 - 20V P-Channel Enhancement Mode MOSFET

Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2831CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature O.

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Datasheet Details

Part number TSM2831
Manufacturer Taiwan Semiconductor Company
File Size 202.38 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2831 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No.
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