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TSM2832 Datasheet 20v N-channel Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: TSM2832 20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ Pin assignment: 1. Gate 2. Drain 3. Source ..

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2832CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximum Rating (Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 C Ta = 75 oC o Limit 2.

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TSM2832 Distributor