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TSM2N7000 Datasheet 60v N-channel Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5.

General Description

..The TSM2N7000 is produced using high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.

It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA.

Key Features

  • — — — — — High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum.

More Datasheets from Taiwan Semiconductor Company

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TSM2N7002K 60V N-Channel MOSFET
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TSM2N7000 Distributor