MUR3060G
MUR3060G is 30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode manufactured by Thinki Semiconductor.
Features
Glass passivated chip junction EPI wafer Ultrafast recovery time for high efficiency Low reverse leakage current High surge capacity
Mechanical Data
Case: TO-220AC heatsink Terminals: Lead solderable per MIL-STD-202, Method 208 Polarity: As marked Standard packaging: Any Weight: 2.5 gram approximately
TO-220AC
.419(10.66) .387(9.85)
.139(3.55) MIN
.269(6.85) .226(5.75) .624(15.87) .548(13.93)
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.177(4.5)MAX .50(12.7)MIN
.038(0.96) .019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
TO-220AC Heatsink
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current TC=125o C
VRRM VRMS VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM (JEDEC method)
Maximum Instantaneous Forward Voltage VF
@ 30.0 A
Maximum DC Reverse Current @TJ=25o C At Rated DC Blocking Voltage @TJ=125o C
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2) Operating Junction and Storage Temperature Range
CJ TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
600 420 600 30.0
1.7 5.0 100 60 120 -55 to +150
UNIT V V V A
V u A u A n S p F o C
Rev.05
© 2006 Thinki Semiconductor Co.,...
