P55NF06
Description
3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
Key Features
- RDS(ON) = 23mȍ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability
- SYMBOL
