Datasheet Details
| Part number | P55NF06 |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 299.71 KB |
| Description | N-CHANNEL POWER MOSFET TRANSISTOR |
| Datasheet |
 P55NF06 Datasheet
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General Description
Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.
Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
Key Features
- S 12 3 TO-252/DPAK.
- RDS(ON) = 23mȍ@VGS = 10 V.
- Ultra low gate charge ( typical 30 nC ).
- Low reverse transfer capacitance ( CRSS = typical 80 pF ).
- Fast switching capability.
- 100% avalanche energy specified.
- Improved dv/dt capability.
- SYMBOL U55NF06 P55NF06 F55NF06 D55NF06 TO-251/IPAK TO-220 TO-220F TO-252/DPAK.