Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V) Rds(on)=0.105Ω(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 4.5V High density mo.

q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-stat.

The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a ga.

XP161A11A1PR-G

XP161A1265PR

XP161A1265PR-G

XP161A1355PR

XP161A1355PR-G

XP161A0390PR

XP1601

XP162A11C0PR

XP162A11C0PR-G

XP162A12A6PR

XP162A12A6PR-G

XP1000

XP1000-BD