2N3790 transistor equivalent, silicon pnp transistor.
. High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A
Low Saturation Voltage: VcE(sat)=-1.0V(Max.)
@ I C=-4A, Ib=-0.4A
Unit in mm
MAXIMUM RATINGS (.
FEATURES
. High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A
Low Saturation Voltage: VcE(sat)=-1.
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