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Toshiba Electronic Components Datasheet

2N3790 Datasheet

Silicon PNP Transistor

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:
SILICON PNP TRIPLE DIFFUSED TYPE
33
POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR
APPLICATIONS.
FEATURES
. High Gain and Excellent hFE Linearity:
hFE=15(Min.) @ VC E=-2V, Ic=-3A
Low Saturation Voltage:
VcE(sat)=-1.0V(Max.)
@ I C=-4A, Ib=-0.4A
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Peak
Base Current
Collector Power Dissipation
(Tc=25°C)Derate Linearly
above 25 & C
Junction Temperature
% Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
I CM
IB
L Stg
RATING
-80
-80
-7
-10
-15
-4
150
0.86
200
-65~ 200
UNIT
u
w/ c
1. BASE
2. EMITTER
COLLECTOR (CASE)
TO—2 4MA/T0—
TC— 3, TB—
TOSHIBA
2-21D1A
Weight : 12. 6g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICEX
VCE=-80V, VBE=1.5V
- - -1 mA
Collector Cut-off Current
Collector Cut-off Current
ICEX
ICEO
VCE=-80V, VBE=1.5V
Tc=150°C
VCE=-40V, I B=0
- - -5 mA
- - -10 mA
Emitter Cut-off Current
lEBO
V EB =-7V, I C =0
- - -5 mA
Collector-Emitter
Sustaining Voltage
VCEO(SUS) I C =-0.2A, I B =0
-80 - - V
DC Current Gain
VCE=-2V, Ic=-1A
hFE
VCE=~2V, I C =-3A
25 -
15 -
90
-
Saturation
Voltage
Collector-
Emitter
Base-Emitter
v CE(sat)
v BE(sat)
Transition Frequency
fT
Collector Output Capacitance Cob
IC=-4A, IB=-0.4A
I C=-4A, IB=-0.4A
Vce=-10V , Ic=-0 . 5A , f =lMHz
V C B=-10V, Ie=0, f=lMHz
-
-
4
-
- -1.0 V
- -2.0
V
- - MHz
- 500 pF
-*C-In accordance with JEDEC registration data.
>*;The sustaining voltage Vceq(SUS) MUST NOT be measured on a curve tracer.
TOSHIBA CORPORATION
-965-


Toshiba Electronic Components Datasheet

2N3790 Datasheet

Silicon PNP Transistor

No Preview Available !

2N3790
r1
)
1n
'lo ><^i
ifl
-8
fi
ic V C E
COMMON EMITTER
0.5 Tc = 25°C
-0.4
-a3
I
-0.2
-0.15
-ai
11
-0.05
-?, -ao3
-m.
II U.U _LA
n 1 1 °,
-2 -4 -6 -8 -10 -12
COLLECTOR-EMITTER VOLTAGE VCE (V)
Ic - VBE
COMMON
EMITTER
VCE = -2V
o -4
o/ <o
7/ //
i
//
H -2
2J
7
BASE-EMITTER VOLTAGE
-2.0
VBE (V)
-2.4
=^r-
500
300
hpj; Ip
:±M
V CE = - 2V
1 II
III
T c = 100°C
1—
25
-55
VcE(sat) - If
- COMMON EMITTER
" 10/18 = 10
1,
i<
-as
« 5 -a 3
•0.
o,
V,
>4 2S 25
-55
*' & ~
-- ^J«—
\
-a oi -ao3 -ai -a 3 -l -3 -10
COLLECTOR CURRENT I c (a)
-0.03
> -aoi
-aoi -ao3 -ai -0.3 -l
COLLECTOR CURRENT
-3 -10
I C (a)
-20
oM w>
^E-i
<!
«|3 tdJ
^Eh a>
m<u
ra
-10
-5
-3
v BE(sat) - I
COMMON EMITTER
J
I C /I B =10
II
Tc=-55°C
i\*
H E-i
O<!
PQ >
-0.5
-a3
25
00
-0.01 -0.03 -0.1 -0.3 -1
COLLECTOR CURRENT
-3 -10
I G (a)
Pr. ~ Tc
50
40 80 120 160 200
CASE TEMPERATURE Tc (°C
240
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-966-


Part Number 2N3790
Description Silicon PNP Transistor
Maker Toshiba
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2N3790 Datasheet PDF






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