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2SC496 - Silicon NPN Transistor

Download the 2SC496 datasheet PDF. This datasheet also covers the 2SC495 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low Collector Saturation Voltage : v CE(sat) =0 - 25v (Typ. ).
  • 0.5^2 Watts Output.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC495_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC496
Manufacturer Toshiba
File Size 90.54 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC496 Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC495 Silicon NPN Transistors
2SC400 SILICON PNP TRANSISTOR
2SC4683 Transistor
2SC1000 Silicon NPN Transistor
2SC1001 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat) =0 - 25v (Typ.) • 0.5^2 Watts Output Application. ' Complementary to 2SA505 and 2SA496. Unit in mm jzfei±o.i 5 &4 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current 2SC495 2SC496 2SC495 2SC496 Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CE0 v EB0 IC IE PC Tstg RATING 70 40 50 30 UNIT -1 150 -55 ^ 150 X EMITTER 2. COLLECTOR (HEAT SINK) a BASE TO 12 6 Mounting Kit No. AC46C Weight : 0.72g ELtCTRICAL CHARACTERISTICS CHARACTERISTIC (Ta=25°C) SYMBOL TEST CONDITION MIN. TYP.
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