2SD1165A transistor equivalent, npn transistor.
. High Voltage : CE0 (SUS) >900V . Triple Diffused Design
* Darlington Design
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Volta.
Unit in mm
2 -04.0 ±0.2
®
©-1
(g)-2
©
BASE
EMITTER EMITTER COLLECTOR
EIAJ TOSHIBA Weight : 150g
2-60B1A
ELECTRICAL .
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