. High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max. . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency
Amplifier Output Stage. Unit in mm
10.3MAX. j#3.2±0.2.
Full PDF Text Transcription for 2SD1407 (Reference)
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:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max....
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: Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max. . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 10.3MAX. j#3.2±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB stg RATING 100 100 0.5 30 150 -55~150 UNIT 1. BASE 2. COLLECTOR 3. EMITTER JEDEC EIAJ TOSHIBA 2-10L1A Weight : 2.
2SD1407 Datasheet
