2SD1407 Datasheet | Specifications & PDF Download

www.DataSheet4U.com 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE M

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:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage :

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm • High breakdo

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isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High b

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