2SD1409 transistor equivalent, silicon npn transistor.
. High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter
Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic C.
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