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2SD1409 Datasheet

Silicon NPN Transistor

No Preview Available !

:
SILICON NPN TRIPLE DIFFUSED TYPE
(DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES
. High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A)
. Monolithic Construction with Built-in 3ase-Emitter
Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
SYMBOL
VCBO
VCEO
RATING
600
400
UNIT
V
V
INDUSTRIAL APPLICATIONS
Unit in mm
10.3MAX.
7.0 03.2±O.2
/
J-r~
J
wJrf rt
C5
H
o
r-'
to
1
* 1.4 ,1
+ 0.25
Q76-ai5
1.2
z
M
S
:::
N
Emitter-Base Voltage
VEBO
5
Collector Current
ic 6
Base Current
Collector Power
Dissipation
u
Ta=25 C
u
Tc=25 C
IB
pC
1
2.0
25
Junction Temperature
Ti 150
Storage Temperature Range
Tstg
-55-150
EQUIVALENT CIRCUIT
BAS
Ki
k.
i
i W>
ELECTRICAL CHARACTERISTICS (Ta=25°C)
o COLLECTOR
i
I' ;
i
Yfr-
i emitter
V
A
A
W
°C
°C
2.54±0.25
mo
dd
+1
2.54±0.25
s<
ID
r .1
12 2
1. BASE
2. COLLECTOR
3. EMITTER
|
JEDEC
EIAJ
TOSHIBA
We ight : 2. lg
-
-
2-10L1A
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICB0 VcB=600V, IE=0
- - 0.5 mA
Emitter Cut-off Current
lEBO
V EB=5V, I C=0
--
3 mA
Collector-Emitter
Breakdown Voltage
v (BR) CEO I c=10mA, Ib=0
400 -
-
V
DC Current Gain
Collector-Emitter
Saturation Voltage
nFEQ)
hFE(2)
v CE(sat)
VC E=2V, I C=2A
V C E=2V, I C =4A
I C=4A, Ib=0.04A
600 -
100 -
-
-
- - 2.0
V
Base-Emitter
Saturation Voltage
vBE(sat) I C=4A, Ib=0.04A
- - 2.5 V
Emitter-Collector
Forward Voltage
Collector Output Capacitance
Turn-on Time
V ECF
Cob
ton
I E=4A, I B=0
Vcb=50V, IE=0, f=lMHz
20/ts
OUT]3UT
jr^ input Ibi'"" z—^zrT
-
-
-
- 3.0
35 -
1-
V
PF
Switching Time Storage Time
tstg
9in -
8-
/JS
Fall Time
I B l=-lB2 = a04A
<tf DUTY CYCLE 1%
X)V -
5-
TOSHIBA CORPORATION
-880-


Toshiba Electronic Components Datasheet

2SD1409 Datasheet

Silicon NPN Transistor

No Preview Available !

2SD1409
±C "- v CE
t>
50^-
30 COMMON
5 20 EMITTER
10 Tc = 25°C
45
2
3
1
21
1
I B = a5mA
1
1
n
2 4 6 8 10 12 14 16
COLLECTOR- EMITTER VOLTAGE VCE (V)
v CE(sat)
am
HO
>I
K
o
Eh SJ
oo
w<
1-3 Eh
wl
o
WH
o
o>
ai Q3 i 3
COLLECTOR CURRENT I C (A)
ic V BE
b
COMMON EMITTER
5 1 V CE =2V
d i_
O
2
J/
<S
04 08
1.2
1.6
2.0
2.4
2.!
BASE- EMITTER VOLTAGE VBE (V)
5000
H 3000
500
300
hpE I C
&nil
>*xr
*& >r
V">
V CE =2V
a 01 0.03
jj.
Ql
Q3
1
COLLECTOR CURRENT
3 10
IC (A)
in
5
^>
w« mw
HH >
M
s
1
w
H<
m H-l
<
1
Ub
m > n7
1 02
VBE( sat ) - ic
COMMON EMITTER
I C /IB -100
T C == -55°C
mb\^
x
\
25
\L00
ai
1 11
0.3
1
COLLECTOR CURRENT
3
I C (A)
SAFE OPERATING AREA
20
I c MAX. (PULSED) %
10
t I c MAX
b
'(CONTI^
NUOUS)
A
\t?
~\
^0
Ub
c
*!>V
U3 1V\
*>« \*
V
wN\<3
Ql 1 II *fl
; •& SINGLE N0NREPETITI
a ob PULSE Tc = 25°C
0.03 - CURVES MUST BE DERATED
\
,\
v*
k
\
<
I N TEV PERAT UR E.
am
2 10 30
j
100
COLLECTOR- EMITTER VOLTAGE
>
VCE (V)
It
llltlllfJMIIIMIIJ
tIJ JIIIMII1 1
fill tlllMltMIIIIJIMIIMIMllMltllltlllllUlllllMIIIJIIilllllMlll
1IJ
IMtilltllMMIIJ
lllllllllllllllltllllllllltlll
CORPORATIONtt ~B~C^^^ aB^^.^^
-881-


Part Number 2SD1409
Description Silicon NPN Transistor
Maker Toshiba
PDF Download

2SD1409 Datasheet PDF






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