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2SD1410 - NPN Transistor

Key Features

  • . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A).

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Datasheet Details

Part number 2SD1410
Manufacturer Toshiba
File Size 89.38 KB
Description NPN Transistor
Datasheet download datasheet 2SD1410 Datasheet

Full PDF Text Transcription for 2SD1410 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1410. For precise diagrams, and layout, please refer to the original PDF.

2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (V...

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ING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RATING VCBO 300 VcEO 250 Vebo 5 ic 6 IB PC T J T stg 1 2.0 25 150 -55-150 COLLECTOR UNIT V V V A A W °C °C 1 1. BASE 2. COLLECTOR 3. EMITTER TOSHIBA 2-10L1A Weight : 2.1g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERIST