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Toshiba Electronic Components Datasheet

A1931 Datasheet

Silicon PNP Epitaxial Type Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
2SA1931
Unit: mm
Low saturation voltage: VCE (sat) = 0.4 V (max)
High-speed switching time: tstg = 1.0 µs (typ.)
Complementary to 2SC4881
Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
7
5
1
2.0
20
150
55 to 150
Electrical Characteristics (Tc = 25°C)
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Conditions
Min
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 50 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 1 A
VCE = 1 V, IC = 3 A
IC = 2 A, IB = 0.2 A
IC = 2 A, IB = 0.2 A
VCB = 1 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
ton 20 µs Input IB2 Output
IB2 IB1
tstg VCC = 30 V
50
100
60
IB1 = IB2 = 0.15 A, duty cycle 1%
tf
Typ.
0.2
0.9
60
100
0.1
1.0
0.1
Max
1
1
300
0.4
1.5
Unit
µA
µA
V
V
V
MHz
pF
µs
1 2005-07-27


Toshiba Electronic Components Datasheet

A1931 Datasheet

Silicon PNP Epitaxial Type Transistor

No Preview Available !

Marking
A1931
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SA1931
2 2005-07-27


Part Number A1931
Description Silicon PNP Epitaxial Type Transistor
Maker Toshiba
Total Page 4 Pages
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