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C2562 - 2SC2562

Features

  • Low Collector Saturation Voltage : VcE(sat)=0-^v < Max -) < at IC=3A).
  • High Speed Switching Time : t stg=1.0ys (Typ. ).
  • Complementary to 2SA1012.

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Full PDF Text Transcription

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: I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VcE(sat)=0-^v < Max -) < at IC=3A) • High Speed Switching Time : t stg=1.0ys (Typ.) • Complementary to 2SA1012. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. ^3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25*C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO v EBO ic pc T i T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING 60 50 5 5 25 150 -55vL50 UNIT V V V A W °C °c 2.54 W 2.54 < 23 € CO 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER TO 220 AB Mounting Kit No. AC75 Weight : 1.
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