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2SC3303
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303
High Current Switching Applications DC-DC Converter Applications
Industrial Applications Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
7
V
DC Collector current
IC
5
A
Pulse
ICP
8
Base current
IB
1
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature
Tj
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
C3303 Datasheet
