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Toshiba Electronic Components Datasheet

C3303 Datasheet

2SC3303

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303
2SC3303
High Current Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
High speed switching time: tstg = 1.0 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 100 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 7 V
Collector current
DC
IC
5
A
Pulse ICP 8
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05


Toshiba Electronic Components Datasheet

C3303 Datasheet

2SC3303

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SC3303
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 100 V, IE = 0
IEBO
VEB = 7 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 1 V, IC = 3 A
IC = 3 A, IB = 0.15 A
IC = 3 A, IB = 0.15 A
VCE = 4 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 μA
― ― 1 μA
80 ― ―
V
70 240
40 ― ―
0.2 0.4
V
0.9 1.2
V
120 MHz
80 pF
Turn-on time
Switching time Storage time
ton 20 μs
IB1 OUTPUT 0.2
INPUT
tstg IB2 IB2
1.0
μs
VCC 30 V
Fall time
tf IB1 = IB2 = 0.15 A,
DUTY CYCLE 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
0.1
C3303
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-02-05


Part Number C3303
Description 2SC3303
Maker Toshiba
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C3303 Datasheet PDF






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