GT50N324 igbt equivalent, silicon n-channel igbt.
(1) Sixth generation (2) Enhancement mode (3) High-speed switching:
IGBT tf = 0.11 µs (typ.) (IC = 60 A) FRD trr = 0.8 µs (typ.) (di/dt = -20 A/µs) (4) Low saturation vol.
* Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be .
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