* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ.) (IC = 60 A) FRD trr = 0.8 µs (typ.) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N3
GT50N324 Datasheet (555.73 KB)
GT50N324
555.73 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT50N324 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note: The produ.
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