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HN1C01FE - Silicon NPN Epitaxial Type Transistor

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = 50 V (4) High collector current: IC = 150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) 3. Packaging and Internal Circuit HN1C01FE ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05.

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Datasheet Details

Part number HN1C01FE
Manufacturer Toshiba
File Size 293.27 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet HN1C01FE Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Epitaxial Type HN1C01FE 1. Applications • Low-Frequency Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = 50 V (4) High collector current: IC = 150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 3. Packaging and Internal Circuit HN1C01FE ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 2021-08-18 Rev.1.0 4.