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HN1C03FU - Silicon NPN Epitaxial Type Transistor

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TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU For Muting and Switching Applications HN1C03FU Unit: mm z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) z Low on resistance: RON = 1Ω (typ.)(IB = 5mA) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation Junction temperature Storage temperature range PC* 200 mW JEDEC ― Tj 150 °C JEITA ― TOSHIBA 2-2J1A Tstg −55 to 150 °C Weight: 6.8 mg (typ.
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