| Part number | HN1C03FU |
|---|---|
| Datasheet | HN1C03FU-Toshiba.pdf |
| File Size | 287.13 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Epitaxial Type Transistor |
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TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU For Muting and Switching Applications HN1C03FU Unit: mm z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE:.
| Part Number | Description |
|---|---|
| HN1C03F | Silicon NPN Epitaxial Type Transistor |
| HN1C01F | Silicon NPN Epitaxial Type Transistor |
| HN1C01FE | Silicon NPN Epitaxial Type Transistor |
| HN1C01FU | Silicon NPN Epitaxial Type Transistor |
| HN1C07F | Silicon NPN Epitaxial Type Transistor |
| HN1A01F | Silicon PNP Epitaxial Type Transistor |
| HN1A01FE | Silicon PNP Epitaxial Type Transistor |
| HN1A01FU | Silicon PNP Epitaxial Type Transistor |
| HN1A02F | Silicon PNP Epitaxial Type Transistor |
| HN1A07F | Silicon PNP Epitaxial Type Transistor |
