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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A51J
Audio Frequency General Purpose Amplifier Applications
z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) z Low noise: NF = 1dB (typ.)
HN4A51J
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage Collector current Base current Collector power dissipation
VEBO IC IB PC*
−5
V
−100
mA
−20
mA
300
mW
1.EMITTER1 (E1)
2.BASE
(B)
3.EMITTER2 (E2)
4.COLLECTOR2 (C2)
5.
HN4A51J Datasheet
