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Title
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Description
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HN4B06J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN4B06J
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1:
z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC =− 2mA) = 0.95 (typ.)
Q2:
z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent...
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Features
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nt Base current
Symbol
VCBO VCEO VEBO
IC IB
Rating
Unit
120
V
120
V
5
V
100
mA
20
mA
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)
45
Equivalent Circuit (Top View)
5
4
Characteristic
Symbol
Rating
Unit
Q1
Q2
Collector power dissipation
PC*
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−5...
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Datasheet
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 HN4B06J Datasheet - 545.17KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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