| Part number | HN4B06J |
|---|---|
| Datasheet | HN4B06J-Toshiba.pdf |
| File Size | 545.17 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN/PNP Epitaxial Type Transistor |
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HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose Amplifier Applications Unit: VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity.
| Part Number | Description |
|---|---|
| HN4B01JE | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B101J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B102J | Silicon PNP/NPN Transistor |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |
| HN4C05JU | Multi Chip Discrete Device |
| HN4C06J | Silicon NPN Epitaxial Type Transistor |
| HN4C51J | Silicon NPN Epitaxial Type Transistor |
