| Part Number | HN4B101J |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon NPN/PNP Epitaxial Type Transistor |
| Description | HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications • Small fo... |
| Features |
ector (NPN) 5. Collector (PNP)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Collector power dissipation (DC)
Single-device operation
PC (Note 2)
0.55
W
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150...
|
| Datasheet |
 HN4B101J Datasheet 250.38KB |
