| Title | Transistor NPN/PNP Dual 30V 1.2A SMV, PK |
| Description | HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.) : NPN tf = 50... |
| Features |
ector (NPN) 5. Collector (PNP)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Collector power dissipation (DC)
Single-device operation
PC (Note 2)
0.55
W
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. No...
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| Datasheet |
 HN4B101J Datasheet - 250.38KB |
| Distributor |
RS |
| Stock | 610 In stock |
| Price |
500 units: 2.498 HKD 250 units: 2.629 HKD 50 units: 3.245 HKD 20 units: 3.386 HKD 10 units: 3.527 HKD
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components HN4B101J(TE85L,F)
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
RS |
500 units: 2.498 HKD 250 units: 2.629 HKD 50 units: 3.245 HKD 20 units: 3.386 HKD 10 units: 3.527 HKD |
BuyNow |
|
 Chip1Stop |
5 units: 0.132 USD 50 units: 0.122 USD 100 units: 0.12 USD 200 units: 0.119 USD 500 units: 0.114 USD |
BuyNow |
|
 Verical |
500 units: 0.1425 USD 216 units: 0.1463 USD |
BuyNow |
