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RN1701 Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Toshiba
Description RN1701 to RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1701, RN1702, RN1703 RN1704, RN1705, RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit  Including two devices in USV (ultra super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufac...
Features ng Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1701 to 1706 RN1701 to 1704 RN1705, 1706 RN1701 to 1706 VCBO VCEO VEBO IC PC* Tj Tstg 50 V 50 V 10 V 5 100 mA 200 mW 150 °C −55 to150 °C Note: Using continuous...

Datasheet PDF File RN1701 Datasheet 1.67MB

RN1701   RN1701   RN1701  




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