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RN1708JE Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Toshiba
Description RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE, RN1708JE, RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts c...
Features ng Unit Collector-base voltage VCBO 50 V RN1707JE to 1709JE Collector-emitter voltage VCEO 50 V RN1707JE 6 Emitter-base voltage RN1708JE VEBO 7 V RN1709JE 15 Collector current IC 100 mA Collector power dissipation PC (Note 1) 100 mW RN1707JE to 1709JE Junction temperature Tj 150 °C Storage temperature range Tstg −...

Datasheet PDF File RN1708JE Datasheet 329.67KB

RN1708JE   RN1708JE   RN1708JE  




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